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| AON7400 N-Channel Enhancement Mode Field Effect Transistor General Description The AON7400 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7400 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 12.5m (VGS = 10V) RDS(ON) < 14.5m (VGS = 4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Continuous Drain Current G Power Dissipation Power Dissipation B Maximum 30 12 20 16 80 10 9 35 14 3.1 2 -55 to 150 Units V V TC=25C TC=100C C ID IDM IDSM PD PDSM TJ, TSTG A TA=25C TA=70C TC=25C TC=100C TA=25C A W TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D C Symbol t 10s Steady-State Steady-State RJA RJC Typ 30 60 3 Max 40 75 3.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7400 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=13.4A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 80 10.5 14.7 12.2 40 0.74 1.0 5 1210 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.8 330 85 1.2 22 VGS=10V, VDS=15V, ID=10A 10 3.7 2.7 10 VGS=10V, VDS=15V, RL=1.1, RGEN=3 IF=10A, dI/dt=100A/s 6.3 21 2.8 36 47 45 1452 396 119 1.6 28 13 14.5 12.5 1.55 Min 30 1 5 0.1 2.5 Typ Max Units V uA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev1: Nov 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 60 ID (A) 40 10 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 20 Normalized On-Resistance 2 1.8 ID=10A 1.6 1.4 1.2 1 0.8 0.6 0 30 60 90 120 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 17 RDS(ON) (m) ID=10A 125C 13 IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C VGS=4.5V VGS=10V VGS=2.5V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 4.5V ID(A) 3V 6V 25 20 15 125 25C VDS=5V 30 15 RDS(ON) (m) VGS=4.5V 10 VGS=10V 5 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 9 25C Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 Capacitance (pF) VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=10A 1500 Ciss 2000 1000 Coss Crss 0 0 5 10 15 20 25 30 500 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10ms DC TJ(Max)=150C TA=25C 100 10s 140 120 100 Power (W) 80 60 40 20 TJ(Max)=150C TA=25C 10.0 ID (Amps) 1m 1.0 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note G) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton T 100 1000 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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